This paper deals with distortion phenomena induced by radio-frequency interference (RFI) in analog integrated circuits and it concentrates on the effects induced by RFI on the operation of feedback CMOS operational amplifiers (opamps). In particular, the paper describes a new nonlinear model, which makes possible the prediction of upset in the opamp output nominal signal when RFI is superimposed on the input nominal signals. Such a model can be employed when the transistors of the input differential pair are driven by RFI either in strong or weak nonlinear operation. Results of experimental tests performed on a Miller CMOS opamp connected in the voltage follower configuration are presented and compared with model predictions.

A new nonlinear model of EMI-induced distortion phenomena in feedback CMOS operational amplifier / Fiori, Franco. - In: IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY. - ISSN 0018-9375. - STAMPA. - 44:4(2002), pp. 495-502. [10.1109/TEMC.2002.804766]

A new nonlinear model of EMI-induced distortion phenomena in feedback CMOS operational amplifier

FIORI, Franco
2002

Abstract

This paper deals with distortion phenomena induced by radio-frequency interference (RFI) in analog integrated circuits and it concentrates on the effects induced by RFI on the operation of feedback CMOS operational amplifiers (opamps). In particular, the paper describes a new nonlinear model, which makes possible the prediction of upset in the opamp output nominal signal when RFI is superimposed on the input nominal signals. Such a model can be employed when the transistors of the input differential pair are driven by RFI either in strong or weak nonlinear operation. Results of experimental tests performed on a Miller CMOS opamp connected in the voltage follower configuration are presented and compared with model predictions.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1400072
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