Electro-optical properties of semiconductor quantum dots: Application to quantum information processing

Item Type: Article
MIUR type: Article > Journal article
Title: Electro-optical properties of semiconductor quantum dots: Application to quantum information processing
Authors string: Biolatti E; D'Amico I; Zanardi P; Rossi F.
University authors:
Referee type: Not specified type
Publisher: APS The American Physical Society
Volume: 65
Number: 7
Page Range: 075306-1-075306-23
Number of Pages: 23
ISSN: 1098-0121
Abstract: A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic—i.e., fully tridimensional—description of Coulomb-correlated few-electron states, obtained via a direct-diagonalization approach. More specifically, we investigate the combined effect of static electric fields and ultrafast sequences of multicolor laser pulses in the few-carrier, i.e., low-excitation regime. In particular, we show how the presence of a properly tailored static field may give rise to significant electron-hole charge separation; these field-induced dipoles, in turn, may introduce relevant exciton-exciton couplings, which are found to induce significant—both intra-dot and interdot—biexcitonic splittings. We finally show that such few-exciton systems constitute an ideal semiconductor-based hardware for an all optical implementation of quantum information processing
Date: 2002
Status: Published
Language of publication: English
Uncontrolled Keywords:
Departments (original): DIFIS - Physics
Departments: DISAT - Department of Applied Science and Technology
Related URLs:
Subjects: Area 02 - Scienze fisiche > FISICA DELLA MATERIA
Date Deposited: 14 Jul 2008 15:13
Last modification data (IRIS): 15 Oct 2013 11:53:35
Update date (PORTO): 25 Feb 2015 10:02
Id Number (DOI): 10.1103/PhysRevB.65.075306
Permalink: http://porto.polito.it/id/eprint/1405235
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