In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented.

Nonadiabatic geometrical quantum gates in semiconductor quantum dots / Solinas, P.; Zanardi, P.; Zanghi, N.; Rossi, Fausto. - In: PHYSICAL REVIEW A. - ISSN 1050-2947. - 67:5(2003), pp. 052309-1-052309-5. [10.1103/PhysRevA.67.052309]

Nonadiabatic geometrical quantum gates in semiconductor quantum dots

ROSSI, FAUSTO
2003

Abstract

In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1405260
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