A generalized Monte Carlo procedure for the ultrafast dynamics of photoexcited carriers in a semiconductor is presented, where the coherence in the carrier system, as well as band renormalization and excitonic effects in the Hartree-Fock approximation are fully taken into account. The details of the coherent generation process, the energy relaxation, and dephasing of the carriers are analyzed. The approach presents a numerical method for the investigation of phenomena occurring close to the band gap and those typical for the relaxation of hot carriers.

Analysis of Coherent and Incoherent Phenomena in Photoexcited Semiconductors: A Monte Carlo Approach / Kuhn, T.; Rossi, Fausto. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 69:6(1992), pp. 977-980. [10.1103/PhysRevLett.69.977]

Analysis of Coherent and Incoherent Phenomena in Photoexcited Semiconductors: A Monte Carlo Approach

ROSSI, FAUSTO
1992

Abstract

A generalized Monte Carlo procedure for the ultrafast dynamics of photoexcited carriers in a semiconductor is presented, where the coherence in the carrier system, as well as band renormalization and excitonic effects in the Hartree-Fock approximation are fully taken into account. The details of the coherent generation process, the energy relaxation, and dephasing of the carriers are analyzed. The approach presents a numerical method for the investigation of phenomena occurring close to the band gap and those typical for the relaxation of hot carriers.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1405269
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