Simulation-Based Analysis of SEU Effects in SRAM-Based FPGAs

SRAM-based field programmable gate arrays (FPGAs) are particularly sensitive to single event upsets (SEUs) that, by changing the FPGA’s configuration memory, may affect dramatically the functions implemented by the device. In this paper we describe a new approach for predicting SEU effects in circuits mapped on SRAM-based FPGAs that combines radiation testing with simulation. The former is used to characterize (in terms of device cross section) the technology on which the FPGA device is based, no matter which circuit it implements. The latter is used to predict the probability for a SEU to alter the expect behavior of a given circuit. By combining the two figures, we then compute the cross section of the circuit mapped on the pre-characterized device. Experimental results are presented that compare the approach we developed with a traditional one based on radiation testing only, to measure the cross section of a circuit mapped on an FPGA. The figures here reported confirm the accuracy of our approach.