Archivio Istituzionale della RicercaHigh-electronic quality hydrogenated amorphous silicon-nitrogen (a-Si1-xNx: H) films with an energy gap in the range 1.9-2.7eV have been deposited by plasma-enhanced chemical vapour deposition in silane-ammonia gas mixtures at two different gas residence times and in hydrogen-diluted silane-ammonia gas mixtures. Compositional, structural, electrical and optical properties have been investigated. For the first time the effects of hydrogen dilution of SiH4 + NH3 gas mixtures on the a-Si1-xNx: H network is reported. We have observed that hydrogen dilution decreases hydrogen incorporation and increases nitrogen incorporation, promoting a higher connectivity of the a-Si1-xNx :H network. All films show good electronic properties, comparable with or superior to those of amorphous silicon-carbon films, which are improved in films deposited from hydrogen-diluted gas mixtures.
Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon nitrogen films deposited by plasma enhanced chemical vapour deposition / Giorgis, Fabrizio; F., Giuliani; Pirri, Candido; Tresso, Elena Maria; C., Summonte; R., Rizzoli; R., Galloni; A., Desalvo; P., Rava. - In: PHILOSOPHICAL MAGAZINE. B. PHYSICS OF CONDENSED MATTER. STRUCTURAL, ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES. - ISSN 0958-6644. - 77:4(1998), pp. 925-944. [10.1080/13642819808206395]
Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon nitrogen films deposited by plasma enhanced chemical vapour deposition
GIORGIS, FABRIZIO;PIRRI, Candido;TRESSO, Elena Maria;
1998
Abstract
High-electronic quality hydrogenated amorphous silicon-nitrogen (a-Si1-xNx: H) films with an energy gap in the range 1.9-2.7eV have been deposited by plasma-enhanced chemical vapour deposition in silane-ammonia gas mixtures at two different gas residence times and in hydrogen-diluted silane-ammonia gas mixtures. Compositional, structural, electrical and optical properties have been investigated. For the first time the effects of hydrogen dilution of SiH4 + NH3 gas mixtures on the a-Si1-xNx: H network is reported. We have observed that hydrogen dilution decreases hydrogen incorporation and increases nitrogen incorporation, promoting a higher connectivity of the a-Si1-xNx :H network. All films show good electronic properties, comparable with or superior to those of amorphous silicon-carbon films, which are improved in films deposited from hydrogen-diluted gas mixtures.
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https://hdl.handle.net/11583/1406654
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