Archivio Istituzionale della RicercaWe report on the pulsed and RF power measurements of passivated GaN HEMTs obtained by two different gate evaporation process. Due to the SiN lateral over-etch prior to the gate metalization step, devices with a selfaligned gate evaporation showed larger dispersion with respect to those where an angled evaporation was performed. The poorer performances of the self-aligned devices have to be related to the surface regions that are not covered by the gate metal, and that have been exposed to the SiN CF4/O2 dry etch process.
Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs / A., Chini; M., Peroni; P., Romanini; C., Lanzieri; Teppati, Valeria; Camarchia, Vittorio; A., Passaseo; G., Verzellesi. - (2005), pp. 30-31. (Intervento presentato al convegno International Workshop on Heterostructure Technology (HETECH) nel October 2005).
Effect of CF4/O2 plasma damage on AlGaN/GaN HEMTs
TEPPATI, VALERIA;CAMARCHIA, VITTORIO;
2005
Abstract
We report on the pulsed and RF power measurements of passivated GaN HEMTs obtained by two different gate evaporation process. Due to the SiN lateral over-etch prior to the gate metalization step, devices with a selfaligned gate evaporation showed larger dispersion with respect to those where an angled evaporation was performed. The poorer performances of the self-aligned devices have to be related to the surface regions that are not covered by the gate metal, and that have been exposed to the SiN CF4/O2 dry etch process.
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https://hdl.handle.net/11583/1418466
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