We present the first physics-based nonstationary modeling of a submicron GaN permeable base transistor. Three different transport models are compared: drift-diffusion, energy balance, and ensemble Monte Carlo. Transport parameters and relaxation times used by the carrier transport equations are consistently derived from particle simulation. The current-voltage (I-V) characteristics predicted with the energy balance model are in good agreement with those obtained from direct Monte Carlo device simulation. On the other hand, the drift-diffusion approach appears to be inadequate for the device under study, even if improved high-field mobility models are adopted.
Physics Based Modeling of Submicron GaN Permeable Base Transistors / Camarchia, Vittorio; E., Bellotti; Goano, Michele; Ghione, Giovanni. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 23:6(2002), pp. 303-305. [10.1109/LED.2002.1004216]
Physics Based Modeling of Submicron GaN Permeable Base Transistors
CAMARCHIA, VITTORIO;GOANO, MICHELE;GHIONE, GIOVANNI
2002
Abstract
We present the first physics-based nonstationary modeling of a submicron GaN permeable base transistor. Three different transport models are compared: drift-diffusion, energy balance, and ensemble Monte Carlo. Transport parameters and relaxation times used by the carrier transport equations are consistently derived from particle simulation. The current-voltage (I-V) characteristics predicted with the energy balance model are in good agreement with those obtained from direct Monte Carlo device simulation. On the other hand, the drift-diffusion approach appears to be inadequate for the device under study, even if improved high-field mobility models are adopted.Pubblicazioni consigliate
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https://hdl.handle.net/11583/1504252
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