In this letter, we present a microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices. In particular, a global Monte Carlo simulation scheme is proposed in order to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between intercarrier thermalization and phonon-assisted relaxation in quantum-cascade lasers is investigated and their relative importance on device performance is clearly identified.

Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach / Iotti, Rita Claudia; Rossi, Fausto. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 78:19(2001), pp. 2902-2904. [10.1063/1.1370537]

Carrier thermalization versus phonon-assisted relaxation in quantum-cascade lasers: A Monte Carlo approach

IOTTI, Rita Claudia;ROSSI, FAUSTO
2001

Abstract

In this letter, we present a microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices. In particular, a global Monte Carlo simulation scheme is proposed in order to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between intercarrier thermalization and phonon-assisted relaxation in quantum-cascade lasers is investigated and their relative importance on device performance is clearly identified.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1508060
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