The most advanced microscopic treatments of optoelectronic quantum devices are reviewed, with special emphasis on the design and simulation of novel quantum-cascade devices operating in the Terahertz spectral region. After recalling the fundamentals of hot-electron transport versus nonequilibrium energy-relaxation and carrier-redistribution in such devices, a few simulated experiments are presented and discussed.

Microscopic modeling of THz quantum cascade lasers and other optoelectronic quantum devices / Iotti, Rita Claudia; Rossi, Fausto. - 772:(2005), pp. 1569-1572. (Intervento presentato al convegno 27th International Conference on the Physics of Semiconductors tenutosi a Flagstaff (USA) nel 26-30 Luglio 2004) [10.1063/1.1994717].

Microscopic modeling of THz quantum cascade lasers and other optoelectronic quantum devices

IOTTI, Rita Claudia;ROSSI, FAUSTO
2005

Abstract

The most advanced microscopic treatments of optoelectronic quantum devices are reviewed, with special emphasis on the design and simulation of novel quantum-cascade devices operating in the Terahertz spectral region. After recalling the fundamentals of hot-electron transport versus nonequilibrium energy-relaxation and carrier-redistribution in such devices, a few simulated experiments are presented and discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1551067
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