We present a numerical model for the analysis of the chirp dynamics of quantum-dot (QD) semiconductor laser under large signal current modulation. The model is based on the multi-population rate equation formalism, and it includes all the peculiar characteristics of the active QD material such as the inhomogeneous broadening of the gain spectrum, the presence of an excited state confined in the QDs and the presence of nonconfined states due to the wetting layer and the barrier. In this paper the model is applied to the analysis of the chirp of two,QD single-mode lasers emitting from the ground state and from the excited state, respectively. In order to make comparisons of the chirp in various operating conditions, we define some equivalent parameters for quantifying the adiabatic and transient contributions to the chirp. These parameters,are then used to analyze the chirp as function of the bias current, of the modulation depth and of the modulation frequency. All the various simulation results show that the carrier accumulation in the QD states, poorly involved in the stimulated emission process and the carrier dynamics in these states, can cause a nonzero chirp under current modulation even for the ideal condition of zero linewidth enhancement factor (or alpha-parameter) at the laser threshold

Numerical analysis of the frequency chirp in quantum dot semiconductor lasers / Gioannini, Mariangela; Montrosset, Ivo. - In: IEEE JOURNAL OF QUANTUM ELECTRONICS. - ISSN 0018-9197. - 43:(2007), pp. 941-949. [10.1109/JQE.2007.904306]

Numerical analysis of the frequency chirp in quantum dot semiconductor lasers

GIOANNINI, Mariangela;MONTROSSET, Ivo
2007

Abstract

We present a numerical model for the analysis of the chirp dynamics of quantum-dot (QD) semiconductor laser under large signal current modulation. The model is based on the multi-population rate equation formalism, and it includes all the peculiar characteristics of the active QD material such as the inhomogeneous broadening of the gain spectrum, the presence of an excited state confined in the QDs and the presence of nonconfined states due to the wetting layer and the barrier. In this paper the model is applied to the analysis of the chirp of two,QD single-mode lasers emitting from the ground state and from the excited state, respectively. In order to make comparisons of the chirp in various operating conditions, we define some equivalent parameters for quantifying the adiabatic and transient contributions to the chirp. These parameters,are then used to analyze the chirp as function of the bias current, of the modulation depth and of the modulation frequency. All the various simulation results show that the carrier accumulation in the QD states, poorly involved in the stimulated emission process and the carrier dynamics in these states, can cause a nonzero chirp under current modulation even for the ideal condition of zero linewidth enhancement factor (or alpha-parameter) at the laser threshold
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1644862
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