Archivio Istituzionale della RicercaA microscopic theory of Wannier-Mott excitons bound to monolayer insertions in semiconductors is presented. It is based on Green's function tight-binding calculations of the single-particle states. For one and two monolayers of InAs in GaAs, the binding energy and the oscillator strength are found to be large and to increase with the number of InAs layers.
Microscopic theory of Wannier-Mott excitons bound to monolayer insertions: the InAs in GaAs case / Iotti, Rita Claudia; DI VENTRA, M; Andreani, L. C.. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 164:1(1997), pp. 129-132. [10.1002/1521-396X(199711)164:1<129::AID-PSSA129>3.0.CO;2-T]
Microscopic theory of Wannier-Mott excitons bound to monolayer insertions: the InAs in GaAs case
IOTTI, Rita Claudia;
1997
Abstract
A microscopic theory of Wannier-Mott excitons bound to monolayer insertions in semiconductors is presented. It is based on Green's function tight-binding calculations of the single-particle states. For one and two monolayers of InAs in GaAs, the binding energy and the oscillator strength are found to be large and to increase with the number of InAs layers.
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https://hdl.handle.net/11583/1659025