A microscopic analysis of non-equilibrium phenomena in unipolar quantum devices is presented. In particular, a global Monte Carlo simulation scheme (semiclassical as well as quantum) is employed, which allows us to directly access details of the three-dimensional carrier dynamics, without resorting to phenomenological parameters. Applications to state-of-the-art mid-infrared quantum-cascade lasers and novel far-infrared emitters are discussed. The extremely good agreement between theoretical results and experimental findings demonstrates that our approach is a valid and predictive tool for the understanding of charge transport in these quantum devices.

Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool / Iotti, Rita Claudia; Rossi, Fausto. - In: JOURNAL OF COMPUTATIONAL ELECTRONICS. - ISSN 1569-8025. - STAMPA. - 2:(2003), pp. 191-195. [10.1023/B:JCEL.0000011423.43254.57]

Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool

IOTTI, Rita Claudia;ROSSI, FAUSTO
2003

Abstract

A microscopic analysis of non-equilibrium phenomena in unipolar quantum devices is presented. In particular, a global Monte Carlo simulation scheme (semiclassical as well as quantum) is employed, which allows us to directly access details of the three-dimensional carrier dynamics, without resorting to phenomenological parameters. Applications to state-of-the-art mid-infrared quantum-cascade lasers and novel far-infrared emitters are discussed. The extremely good agreement between theoretical results and experimental findings demonstrates that our approach is a valid and predictive tool for the understanding of charge transport in these quantum devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1659051
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