Archivio Istituzionale della RicercaIn the present work it is reported a study on ZnO:Al deposited by RF magnetron sputtering of Zn and Al cathodes, or ZnO and Al cathodes in Ar+O2 and Ar atmosphere respectively. In order to obtain high band-gap films transparent in the 300 - 1000 nm wavelength region and highly electrical conductive films, an optimization of the deposition parameters has been performed by the Robust Design Method. ZnO:Al films, with an average transmittance above 85% for about 5000 angstroms thickness and a resistivity of 2 10-3 (Omega) cm have been grown.
Development of transparent conductive ZnO by RF magnetron sputtering / F., Demichelis; Pirri, Candido; Tresso, Elena Maria. - In: PROCEEDINGS - SPIE. - ISSN 1018-4732. - 2253:(1994), pp. 103-113. [10.1117/12.192077]
Development of transparent conductive ZnO by RF magnetron sputtering
PIRRI, Candido;TRESSO, Elena Maria
1994
Abstract
In the present work it is reported a study on ZnO:Al deposited by RF magnetron sputtering of Zn and Al cathodes, or ZnO and Al cathodes in Ar+O2 and Ar atmosphere respectively. In order to obtain high band-gap films transparent in the 300 - 1000 nm wavelength region and highly electrical conductive films, an optimization of the deposition parameters has been performed by the Robust Design Method. ZnO:Al films, with an average transmittance above 85% for about 5000 angstroms thickness and a resistivity of 2 10-3 (Omega) cm have been grown.
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https://hdl.handle.net/11583/1661298
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