Archivio Istituzionale della RicercaGallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.
GaN Device Technology: Manufacturing, Characterization, Modelling and Verification / W., Ciccognani; F., Giannini; E., Limiti; P. E., Longhi; A., Nanni; A., Serino; C., Lanzieri; M., Peroni; P., Romanini; Camarchia, Vittorio; Pirola, Marco; Ghione, Giovanni. - STAMPA. - Unico:(2008), pp. 15-20. (Intervento presentato al convegno Comite 2008 tenutosi a Prague, Czech republic nel April 2008) [10.1109/COMITE.2008.4569884].
GaN Device Technology: Manufacturing, Characterization, Modelling and Verification.
CAMARCHIA, VITTORIO;PIROLA, Marco;GHIONE, GIOVANNI
2008
Abstract
Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.
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https://hdl.handle.net/11583/1785921
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