The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology models.
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells / DI CARLO, Stefano; Prinetto, Paolo Ernesto; Savino, Alessandro; Scionti, A.. - STAMPA. - (2008), pp. 411-416. (Intervento presentato al convegno IEEE 17th Asian Test Symposium (ATS) tenutosi a Sapporo, JP nel 24-27 Nov. 2008) [10.1109/ATS.2008.13].
Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells
DI CARLO, STEFANO;PRINETTO, Paolo Ernesto;SAVINO, ALESSANDRO;
2008
Abstract
The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology models.File | Dimensione | Formato | |
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2008-ATS-Memory-AuthorVersion.pdf
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https://hdl.handle.net/11583/1845210
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