Two high-efficiency power amplifiers have been designed, fabricated, and tested using a commercially available GaN HEMT transistor and a low-cost hybrid microstrip PCB. The designed hybrid modules are a “tuned load” Class B amplifier and a Class F amplifier. The simulated performances show a peak efficiency of 72 and 78 % with an output power of 5 and 4.5W respectively. The measured performance, although still satisfactory, exhibits an efficiency of 60 and 55 %, respectively, for the two stages. The paper presents a discussion on the design approach, on the intrinsic/extrinsic load to be presented to the active device, and on the cause of the efficiency drop occurring between the simulated and measurement performances.

Development strategy for GaN-based high-efficiency hybrid medium-power RF amplifiers through low-cost substrate prototyping / Fang, Jie; MORENO RUBIO, JORGE JULIAN; Quaglia, Roberto; Tinivella, Riccardo; Camarchia, Vittorio; Pirola, Marco; Ghione, Giovanni. - STAMPA. - Unico:(2010), pp. 1-4. (Intervento presentato al convegno Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on tenutosi a Vilnius (Lithuania) nel 14-16 June 2010).

Development strategy for GaN-based high-efficiency hybrid medium-power RF amplifiers through low-cost substrate prototyping

FANG, JIE;MORENO RUBIO, JORGE JULIAN;QUAGLIA, ROBERTO;TINIVELLA, RICCARDO;CAMARCHIA, VITTORIO;PIROLA, Marco;GHIONE, GIOVANNI
2010

Abstract

Two high-efficiency power amplifiers have been designed, fabricated, and tested using a commercially available GaN HEMT transistor and a low-cost hybrid microstrip PCB. The designed hybrid modules are a “tuned load” Class B amplifier and a Class F amplifier. The simulated performances show a peak efficiency of 72 and 78 % with an output power of 5 and 4.5W respectively. The measured performance, although still satisfactory, exhibits an efficiency of 60 and 55 %, respectively, for the two stages. The paper presents a discussion on the design approach, on the intrinsic/extrinsic load to be presented to the active device, and on the cause of the efficiency drop occurring between the simulated and measurement performances.
2010
9781424452880
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2373080
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