By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n2D as high as 3.5×10^15  e/cm^2 in gold films and to observe large relative variations in the film resistance, ΔR/R′, up to 10% at low temperature. ΔR/R′ is a linear function of n2D—as expected within a free-electron model—if the film is thick enough (≥25  nm); otherwise, a tendency to saturation due to size effects is observed. The application of this technique to 2D materials might allow extending the field-effect experiments to a range of charge doping where large conductance modulations and, in some cases, even the occurrence of superconductivity are expected.

Large Conductance Modulation of Gold Thin Films by Huge Charge Injection via Electrochemical Gating / Daghero, Dario; Paolucci, F.; Sola, Alessandro; Tortello, Mauro; Ummarino, Giovanni; Agosto, M.; Gonnelli, Renato; Nair, JIJEESH RAVI; Gerbaldi, Claudio. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 108:6(2012), pp. 066807-1-066807-5. [10.1103/PhysRevLett.108.066807]

Large Conductance Modulation of Gold Thin Films by Huge Charge Injection via Electrochemical Gating

DAGHERO, Dario;SOLA, ALESSANDRO;TORTELLO, MAURO;UMMARINO, Giovanni;GONNELLI, Renato;NAIR, JIJEESH RAVI;GERBALDI, CLAUDIO
2012

Abstract

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n2D as high as 3.5×10^15  e/cm^2 in gold films and to observe large relative variations in the film resistance, ΔR/R′, up to 10% at low temperature. ΔR/R′ is a linear function of n2D—as expected within a free-electron model—if the film is thick enough (≥25  nm); otherwise, a tendency to saturation due to size effects is observed. The application of this technique to 2D materials might allow extending the field-effect experiments to a range of charge doping where large conductance modulations and, in some cases, even the occurrence of superconductivity are expected.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2490498
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