Ground-state power quenching in two-state lasing quantum dot lasers

Item Type: Article
MIUR type: Article > Journal article
Title: Ground-state power quenching in two-state lasing quantum dot lasers
Authors string: Mariangela Gioannini
University authors:
Journal or Publication Title: JOURNAL OF APPLIED PHYSICS
Referee type: Anonymous experts
Publisher: American Institute of Physics
Volume: 111
Number: 4
Page Range: 043108-1-043108-9
Number of Pages: 9
ISSN: 0021-8979
Abstract: The paper analyses theoretically the quenching of the ground state (GS) power observed in InAs/GaAs quantum dot lasers when emitting simultaneously from both ground state and excited state. The model, based on a set of rate equations for the electrons, holes, and photons, shows that the power quenching is caused by the different time scales of the electron and hole intra-level dynamic, as well as by the long transport time of the holes in the GaAs barrier. The results presented also evidence how the very different dynamics of electrons and holes have other important consequences on the laser behavior; we show for example that the electron and hole carrier densities of the states resonant with lasing modes are never clamped at the threshold value, and that the damping of relaxation oscillations is strongly influenced by the hole dynamics
Date: 2012
Status: Published
Language of publication: English
Uncontrolled Keywords: gs power quenching, two state lasing, modelling of qd lasers, quantum dot lasers
Departments (original): DET - Department of Electronics and Telecommunications
Departments: DET - Department of Electronics and Telecommunications
Related URLs:
Subjects: Area 09 - Ingegneria industriale e dell'informazione > ELETTRONICA
Date Deposited: 27 Feb 2012 23:02
Last Modified: 12 Dec 2013 01:20
Id Number (DOI): 10.1063/1.3682574
Permalink: http://porto.polito.it/id/eprint/2495610
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