A detailed analysis of the cooling and thermalization process for photogenerated carriers in semiconductor quantum wires is presented. The energy relaxation of the nonequilibrium carrier distribution is investigated for the ‘‘realistic’’ case of a rectangular multisubband quantum-wire structure. By means of a direct ensemble Monte Carlo simulation of both the carrier and the phonon dynamics, all the nonlinear phenomena relevant for the relaxation process, such as carrier-carrier interaction, hot-phonon effects, and degeneracy, are investigated. The results of these simulated experiments show a significant reduction of the carrier-relaxation process compared to the bulk case, which is mainly due to the reduced efficiency of carrier-carrier scattering; on the contrary, the role of hot-phonon effects and degeneracy seems to be not so different from that played in bulk semiconductors.

Ultrafast relaxation of photoexcited carriers in semiconductor quantum wires: A Monte Carlo approach / Rota, L.; Rossi, Fausto; Lugli, P.; Molinari, E.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 52:7(1995), pp. 5183-5201. [10.1103/PhysRevB.52.5183]

Ultrafast relaxation of photoexcited carriers in semiconductor quantum wires: A Monte Carlo approach

ROSSI, FAUSTO;
1995

Abstract

A detailed analysis of the cooling and thermalization process for photogenerated carriers in semiconductor quantum wires is presented. The energy relaxation of the nonequilibrium carrier distribution is investigated for the ‘‘realistic’’ case of a rectangular multisubband quantum-wire structure. By means of a direct ensemble Monte Carlo simulation of both the carrier and the phonon dynamics, all the nonlinear phenomena relevant for the relaxation process, such as carrier-carrier interaction, hot-phonon effects, and degeneracy, are investigated. The results of these simulated experiments show a significant reduction of the carrier-relaxation process compared to the bulk case, which is mainly due to the reduced efficiency of carrier-carrier scattering; on the contrary, the role of hot-phonon effects and degeneracy seems to be not so different from that played in bulk semiconductors.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2498594
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