In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By employing a density-matrix simulation strategy recently proposed, we shall demonstrate its power and flexibility in describing quantum diffusion phenomena in nanoscale semiconductors. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis will show the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.

Quantum diffusion due to scattering non-locality in nanoscale semiconductors / Rosati, Roberto; Rossi, Fausto. - In: EUROPHYSICS LETTERS. - ISSN 0295-5075. - STAMPA. - 105:(2014), pp. 17010-p1-17010-p6. [10.1209/0295-5075/105/17010]

Quantum diffusion due to scattering non-locality in nanoscale semiconductors

ROSATI, ROBERTO;ROSSI, FAUSTO
2014

Abstract

In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By employing a density-matrix simulation strategy recently proposed, we shall demonstrate its power and flexibility in describing quantum diffusion phenomena in nanoscale semiconductors. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis will show the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2528886
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo