Archivio Istituzionale della RicercaDesign and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are presented. The amplifier, suitable for point-to-point microwave backhaul applications, exploits a TriQuint GaN foundry process. Large signal measurements exhibit power gain higher than 10 dB and 7 dB in the lower and higher bands respectively, and saturated output power of 34.7 dBm, in a 15% band around the two center frequencies.
Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications / Quaglia, Roberto; Camarchia, Vittorio; Pirola, Marco. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 24:5(2014), pp. 409-411. [10.1109/LMWC.2014.2313587]
Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications
QUAGLIA, ROBERTO;CAMARCHIA, VITTORIO;PIROLA, Marco
2014
Abstract
Design and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are presented. The amplifier, suitable for point-to-point microwave backhaul applications, exploits a TriQuint GaN foundry process. Large signal measurements exhibit power gain higher than 10 dB and 7 dB in the lower and higher bands respectively, and saturated output power of 34.7 dBm, in a 15% band around the two center frequencies.
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https://hdl.handle.net/11583/2539895
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