Archivio Istituzionale della RicercaSemiconducting nanowires with transverse dimen- sions of less than 10nm are considered, among all, as good candi- dates for gas sensing applications. Interaction with molecules and surface materials modifies the transport properties of the wire, largely dominated by quantum effects. Here we propose a sys- tematic analysis of the transport properties of a silicon nanowire interacting with a surface material with different geometrical and electrical properties. We demonstrate the sensitivity of the transmission spectrum and current on the external layer thickness and permittivity, surface charge density and surface coverage
Analysis of the Effects of surface interaction on Silicon Nanowires conduction / Antidormi, Aleandro; Graziano, Mariagrazia; Boarino, L; Piccinini, Gianluca. - ELETTRONICO. - (2015), pp. 1328-1330. (Intervento presentato al convegno IEEE Nano tenutosi a Rome nel July 2015) [10.1109/NANO.2015.7388879].
Analysis of the Effects of surface interaction on Silicon Nanowires conduction
ANTIDORMI, ALEANDRO;GRAZIANO, MARIAGRAZIA;PICCININI, GIANLUCA
2015
Abstract
Semiconducting nanowires with transverse dimen- sions of less than 10nm are considered, among all, as good candi- dates for gas sensing applications. Interaction with molecules and surface materials modifies the transport properties of the wire, largely dominated by quantum effects. Here we propose a sys- tematic analysis of the transport properties of a silicon nanowire interacting with a surface material with different geometrical and electrical properties. We demonstrate the sensitivity of the transmission spectrum and current on the external layer thickness and permittivity, surface charge density and surface coverage
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https://hdl.handle.net/11583/2616683
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