Archivio Istituzionale della RicercaTungsten oxide films with different thickness were grown by sputtering deposition. Analysis of sample morphology showed that the films were constituted by sub-micrometric columnar structures, with diameters in the range 100-500nm. As-deposited films revealed an almost-amorphous crystal structure and a wide optical band-gap of about 3.28eV. Thermal annealing at 500°C was used to promote the formation of a monoclinic WO3 crystal structure and the reduction of the band-gap. Photo-electrochemical characterizations were used to compare the responses of the different films and to evaluate their possible use in water splitting applications.
Sputtered WO3 films for water splitting applications / Valerini, D.; HERNANDEZ RIBULLEN, SIMELYS PRIS; Di Benedetto, F.; Russo, Nunzio; Saracco, Guido; Rizzo, A.. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - STAMPA. - 42:(2016), pp. 150-154. [10.1016/j.mssp.2015.09.013]
Sputtered WO3 films for water splitting applications
HERNANDEZ RIBULLEN, SIMELYS PRIS;RUSSO, Nunzio;SARACCO, GUIDO;
2016
Abstract
Tungsten oxide films with different thickness were grown by sputtering deposition. Analysis of sample morphology showed that the films were constituted by sub-micrometric columnar structures, with diameters in the range 100-500nm. As-deposited films revealed an almost-amorphous crystal structure and a wide optical band-gap of about 3.28eV. Thermal annealing at 500°C was used to promote the formation of a monoclinic WO3 crystal structure and the reduction of the band-gap. Photo-electrochemical characterizations were used to compare the responses of the different films and to evaluate their possible use in water splitting applications.
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https://hdl.handle.net/11583/2627512
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