This work proposes a low-cost and easy-to-fabricate sensor based on single ZnO nanowire (ZnO-NW) assembled by dielectrophoresis (DEP) onto gold nanogap electrodes. Thanks to the widespread sensing properties of ZnO-NWs, the fabric ated device can be used to monitor in real-time the UV-light. DC measurements have shown a Schottky-like I-V characteristic which varies depending on the UV light intensity. The AC analysis of the ZnO-NW electrical properties has also shown impedance variations proportional to the UV irradiance. In particular, the reported measurements show high sensitivity to low UV irradiance (below 1mW/cm2) translated to both resistive and capacitive variations. Thanks to the low-cost assembly process, the proposed nanowire-on-nanogap-based sensor can be considered a preliminary step to characterize nanomaterials before assembling them onto CMOS technology, opening the field to the Micro-for-Nano approach, i.e. an electronic circuit platform to integrate nanostructured materials and read-out their sensing parameters.

Interface of a single ZnO-nanowire assembled onto custom-fabricated nanogap device for UV sensing applications / Miccoli, Beatrice; Bonanno, Alberto; Cauda, Valentina Alice; Sanginario, Alessandro; Demarchi, Danilo. - ELETTRONICO. - (2015), pp. 431-435. (Intervento presentato al convegno 38th International Spring Seminar on Electronics Technology (ISSE) tenutosi a Eger nel 6-10 May 2015) [10.1109/ISSE.2015.7248035].

Interface of a single ZnO-nanowire assembled onto custom-fabricated nanogap device for UV sensing applications

MICCOLI, BEATRICE;BONANNO, ALBERTO;CAUDA, Valentina Alice;SANGINARIO, ALESSANDRO;DEMARCHI, DANILO
2015

Abstract

This work proposes a low-cost and easy-to-fabricate sensor based on single ZnO nanowire (ZnO-NW) assembled by dielectrophoresis (DEP) onto gold nanogap electrodes. Thanks to the widespread sensing properties of ZnO-NWs, the fabric ated device can be used to monitor in real-time the UV-light. DC measurements have shown a Schottky-like I-V characteristic which varies depending on the UV light intensity. The AC analysis of the ZnO-NW electrical properties has also shown impedance variations proportional to the UV irradiance. In particular, the reported measurements show high sensitivity to low UV irradiance (below 1mW/cm2) translated to both resistive and capacitive variations. Thanks to the low-cost assembly process, the proposed nanowire-on-nanogap-based sensor can be considered a preliminary step to characterize nanomaterials before assembling them onto CMOS technology, opening the field to the Micro-for-Nano approach, i.e. an electronic circuit platform to integrate nanostructured materials and read-out their sensing parameters.
2015
978-1-4799-8860-0
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2627660
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