For over a decade, buffer macromodeling has been a topic of great interest for the integrated circuit industry. The performance assessment of high-speed datalinks requires efficient means of simulating IC ports making compact and accurate behavioral models valuable instruments. In the present communication a new modeling technique, with several important advantages is described. The approach is purely “black-box”, relying exclusively on the observation of the external port voltages and currents safeguarding intellectual property. Unlike the standard algorithms currently used in EDA tools, the method described in this paper models the input-output behavior by means of a simple nonlinear system easy to identify and implement. Good model performance in overclocking conditions is an important advantage.
Robust nonlinear models for CMOS buffers / Diouf, C.; Telescu, M.; Tanguy, N.; Stievano, IGOR SIMONE; Canavero, Flavio. - ELETTRONICO. - (2016), pp. 1-4. (Intervento presentato al convegno 2016 IEEE 20th Workshop on Signal and Power Integrity (SPI) tenutosi a Torino, I nel May 8-11, 2016) [10.1109/SaPIW.2016.7496284].
Robust nonlinear models for CMOS buffers
STIEVANO, IGOR SIMONE;CANAVERO, Flavio
2016
Abstract
For over a decade, buffer macromodeling has been a topic of great interest for the integrated circuit industry. The performance assessment of high-speed datalinks requires efficient means of simulating IC ports making compact and accurate behavioral models valuable instruments. In the present communication a new modeling technique, with several important advantages is described. The approach is purely “black-box”, relying exclusively on the observation of the external port voltages and currents safeguarding intellectual property. Unlike the standard algorithms currently used in EDA tools, the method described in this paper models the input-output behavior by means of a simple nonlinear system easy to identify and implement. Good model performance in overclocking conditions is an important advantage.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2645307
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