Modelling of broadband light sources based on InAs / INxGA1-xAS metamorphic quantum dots

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic 4-step-graded InxGa1- xAs buffer with x = 0.10, 0.20, 0.30, 0.40. We developed a model to calculate metamorphic QD energy levels based on realistic QD parameters and on strain-dependent material properties: results of simulations were validated against experimental values. By simulating the broadband metamorphic structure, we demonstrated that its light emission can cover the whole 1.0 - 1.7 μm range with a bandwidth of 550 nm at 10K. The emission spectrum was then assessed under realistic electrical injection conditions, at room temperature, through device-level simulations based on a coupled drift-diffusion and QD dynamics model. As metamorphic QD devices have been already fabricated with satisfying performances we believe that this proposal is a viable option to realize broader band light-emitting devices such as superluminescent diodes.