In recent times direct integration of ferroelectrics on silicon wafer has been attracting interest [1]. Electrophoretic deposition (EPD) was investigated in this laboratory [2] as an alternative mean to produce lead zirconate titanate (PZT) film on silicon wafers followed by sintering at 850-950°C. EPD is an easily implemented deposition technique that requires only basic laboratory gear and a sufficiently stable colloidal suspension to produce ceramic and electroceramic films with thickness in the 100 nm – 10 mm range3 . It has been found that the EPD of niobium-doped lead zirconate titanate (PZTN), performed in ethanol-based suspensions of PZT on bare silicon wafers on which Al/Si alloyed ohmic contacts were made, produced smooth green films that strongly pinned to the silicon substrate after sintering. Thick and well-adhered sintered PZT films on silicon having thickness about 50 µm were thus obtained. Such structures could be the core of novel on-chip sensors/actuators. The results of the production of thick PZT films by EPD and sintering and some characterizations of the same are reported. [1] M. Y. Gureev, A. K. Tangatsev, N. Setter; IEEE T Ultrason Ferr, 58, 1959 (2011) [2] C. Baldisserri, D. Gardini, C. Galassi; Sensor Actuat A-Phys, 174, 123 (2012) [3] P. Sarkar, P.S. Nicholson; J Am Ceram Soc, 79, 1987 (1996)

PZT film on silicon by electrophoretic deposition / Galizia, Pietro; Baldisserri, C.; Galassi, C.. - (2014), pp. 62-62. (Intervento presentato al convegno Electrophoretic Deposition V: Fundamentals and Applications tenutosi a Hernstein (Austria) nel October 5-10, 2014).

PZT film on silicon by electrophoretic deposition

GALIZIA, PIETRO;
2014

Abstract

In recent times direct integration of ferroelectrics on silicon wafer has been attracting interest [1]. Electrophoretic deposition (EPD) was investigated in this laboratory [2] as an alternative mean to produce lead zirconate titanate (PZT) film on silicon wafers followed by sintering at 850-950°C. EPD is an easily implemented deposition technique that requires only basic laboratory gear and a sufficiently stable colloidal suspension to produce ceramic and electroceramic films with thickness in the 100 nm – 10 mm range3 . It has been found that the EPD of niobium-doped lead zirconate titanate (PZTN), performed in ethanol-based suspensions of PZT on bare silicon wafers on which Al/Si alloyed ohmic contacts were made, produced smooth green films that strongly pinned to the silicon substrate after sintering. Thick and well-adhered sintered PZT films on silicon having thickness about 50 µm were thus obtained. Such structures could be the core of novel on-chip sensors/actuators. The results of the production of thick PZT films by EPD and sintering and some characterizations of the same are reported. [1] M. Y. Gureev, A. K. Tangatsev, N. Setter; IEEE T Ultrason Ferr, 58, 1959 (2011) [2] C. Baldisserri, D. Gardini, C. Galassi; Sensor Actuat A-Phys, 174, 123 (2012) [3] P. Sarkar, P.S. Nicholson; J Am Ceram Soc, 79, 1987 (1996)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2646488
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