A multi-gap ionization monitor chamber has been developed by INFN and Torino University, for monitoring of high intensity pulsed charged particle beams. The read-out of the chamber is based on a 64-channel ASIC, designed in CMOS 0.35μm technology which features for each channel an independent current-to-frequency converter followed by a synchronous counter. The chip was designed for connecting each channel to a different detector element. However, high beam intensities may lead to an input current above the saturation level of a single channel. A novel readout has been tested where all the input channels of the chip have been connected in parallel to the same detector element allowing to reach 64-times higher input current with only a modest deterioration of the resolution. Results will be presented in terms of linearity and noise, and will be compared to a simulation where the chip is modeled as a set of independent and uncorrelated channels.

Development of a front-end electronics for an innovative monitor chamber for high-intensity charged particle beams / Guarachi, Leslie Karen Fanola; Fausti, Federico; Marchetto, Flavio; Giordanengo, Simona; Mazza, Giovanni; Anvar, Mohammad Varasteh; Monaco, Vincenzo; Sacchi, Roberto; Cirio, Roberto. - In: IEEE 21st, At Washington, USA. - ELETTRONICO. - IEEE Xplore NSS/MIC:(2014), pp. 1-4. (Intervento presentato al convegno IEEE NUCLEAR SCIENCE SYMPOSIUM & MEDICAL IMAGING CONFERENCE 21ST SYMPOSIUM ON ROOM-TEMPERATURE SEMICONDUCTOR X-RAY AND GAMMA-RAY DETECTORS tenutosi a Seattle, Washington, US nel 8-15 November 2014) [10.1109/NSSMIC.2014.7431101].

Development of a front-end electronics for an innovative monitor chamber for high-intensity charged particle beams

FAUSTI, FEDERICO;
2014

Abstract

A multi-gap ionization monitor chamber has been developed by INFN and Torino University, for monitoring of high intensity pulsed charged particle beams. The read-out of the chamber is based on a 64-channel ASIC, designed in CMOS 0.35μm technology which features for each channel an independent current-to-frequency converter followed by a synchronous counter. The chip was designed for connecting each channel to a different detector element. However, high beam intensities may lead to an input current above the saturation level of a single channel. A novel readout has been tested where all the input channels of the chip have been connected in parallel to the same detector element allowing to reach 64-times higher input current with only a modest deterioration of the resolution. Results will be presented in terms of linearity and noise, and will be compared to a simulation where the chip is modeled as a set of independent and uncorrelated channels.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2653618
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