An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.

Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires / Catalano, M.; Taurino, A.; Lomascolo, M.; Vasanelli, L.; DE GIORGI, M.; Passaseo, A.; Rinaldi, R.; Cingolani, R.; Mauritz, O.; Goldoni, G.; Rossi, Fausto; Molinari, E.; Crozier, P.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 87:5(2000), pp. 2261-2264. [10.1063/1.372170]

Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires

ROSSI, FAUSTO;
2000

Abstract

An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1405226
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