This paper reports an investigation of the physical origin of the thermal droop (the drop of the optical power at high temperatures) in InGaN-based light-emitting diodes. We critically investigate the role of various mechanisms including Shockley-Read-Hall recombination, thermionic escape from the quantum well, phonon-assisted tunneling, and thermionic trap-assisted tunneling; in addition, to explain the thermal droop, we propose a closed-form model which is able to accurately fit the experimental data by using values extracted from measurements and simulations and a limited set of fitting parameters. The model is based on a two-step phonon-assisted tunneling over an intermediate defective state, corrected in order to take into account the pure thermionic component at zero bias and the field-assisted term.

Role of defects in the thermal droop of InGaN-based light emitting diodes / De Santi, C.; Meneghini, M.; La Grassa, M.; Galler, B.; Zeisel, R.; Goano, Michele; Dominici, Stefano; Mandurrino, Marco; Bertazzi, Francesco; Robidas, D.; Meneghesso, G.; Zanoni, E.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 119:9(2016), p. 094501. [10.1063/1.4942438]

Role of defects in the thermal droop of InGaN-based light emitting diodes

GOANO, MICHELE;DOMINICI, STEFANO;MANDURRINO, MARCO;BERTAZZI, FRANCESCO;
2016

Abstract

This paper reports an investigation of the physical origin of the thermal droop (the drop of the optical power at high temperatures) in InGaN-based light-emitting diodes. We critically investigate the role of various mechanisms including Shockley-Read-Hall recombination, thermionic escape from the quantum well, phonon-assisted tunneling, and thermionic trap-assisted tunneling; in addition, to explain the thermal droop, we propose a closed-form model which is able to accurately fit the experimental data by using values extracted from measurements and simulations and a limited set of fitting parameters. The model is based on a two-step phonon-assisted tunneling over an intermediate defective state, corrected in order to take into account the pure thermionic component at zero bias and the field-assisted term.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2637642
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