A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GHz.

Accurate on-wafer power and harmonic measurements of mm-wave amplifiers and devices / B., Hughes; Ferrero, ANDREA PIERENRICO; A., Cognata. - STAMPA. - 2:(1992), pp. 1019-1022. (Intervento presentato al convegno IEEE MTT-S International Microwave Symposium tenutosi a Albuquerque, NM (USA) nel 1-5 Jun 1992) [10.1109/MWSYM.1992.188164].

Accurate on-wafer power and harmonic measurements of mm-wave amplifiers and devices

FERRERO, ANDREA PIERENRICO;
1992

Abstract

A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GHz.
1992
0780306112
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2497893
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