We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAsquantum dots(QDs) embedded into a metamorphic step-graded InxGa1−xAs buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in InxAlyGa1−x−yAs layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescenceemission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.

Broadband light sources based on InAs/InGaAs metamorphic quantum dots / Seravalli, L.; Gioannini, Mariangela; Cappelluti, Federica; Sacconi, F.; Trevisi, G.; Frigeri, P.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 119:14(2016), pp. 143102-1-143102-8. [10.1063/1.4945436]

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

GIOANNINI, Mariangela;CAPPELLUTI, Federica;
2016

Abstract

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAsquantum dots(QDs) embedded into a metamorphic step-graded InxGa1−xAs buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in InxAlyGa1−x−yAs layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescenceemission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2655929
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