Archivio Istituzionale della RicercaWANG, SHUANGBAO
WANG, SHUANGBAO
Dipartimento di Scienza dei Materiali e Ingegneria Chimica (attivo dal 01/01/1900 al 31/12/2011)
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Risultati 1 - 4 di 4 (tempo di esecuzione: 0.014 secondi).
“Preparation of vanadium oxides thin films by ion beam sputtering and oxidation annealing”
2004 Wang, Shuangbao; X. J., Yi
“Preferential growth of C54TiSi(2) by metal vapor vacuum arc ion source implantation and post-annealing”
2000 Wang, Shuangbao; P. R., Zhu
“The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process”
2000 Wang, Shuangbao; H., Liang; P. R., Zhu
Characteristics of CrSi2 and Cr(Ni)Si-2 synthesis in MEVVA ion source implantation and post-annealing processes
1999 Wang, Shuangbao; H., Liang; P. R., Zhu
| Citazione | Data di pubblicazione | Autori | File |
|---|---|---|---|
| “Preparation of vanadium oxides thin films by ion beam sputtering and oxidation annealing” / Wang, Shuangbao; X. J., Yi. - In: VACUUM. - ISSN 0042-207X. - 75:(2004), pp. 85-89. | 1-gen-2004 | WANG, SHUANGBAO + | - |
| “Preferential growth of C54TiSi(2) by metal vapor vacuum arc ion source implantation and post-annealing” / Wang, Shuangbao; P. R., Zhu. - In: SURFACE & COATINGS TECHNOLOGY. - ISSN 0257-8972. - 131:(2000), pp. 84-87. | 1-gen-2000 | WANG, SHUANGBAO + | - |
| “The formation of Ti-silicides by a metal vapour vacuum are ion source implantation and annealing process” / Wang, Shuangbao; H., Liang; P. R., Zhu. - In: VACUUM. - ISSN 0042-207X. - 59:(2000), pp. 919-921. | 1-gen-2000 | WANG, SHUANGBAO + | - |
| Characteristics of CrSi2 and Cr(Ni)Si-2 synthesis in MEVVA ion source implantation and post-annealing processes / Wang, Shuangbao; H., Liang; P. R., Zhu. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 153:(1999), pp. 108-111. | 1-gen-1999 | WANG, SHUANGBAO + | - |