Pubblicazioni il cui periodico è "IEEE TRANSACTIONS ON ELECTRON DEVICES"

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Numero di pubblicazioni : 24.

Articolo di rivista Donati Guerrieri, Simona; Pirola, Marco; Bonani, Fabrizio (2017)
Concurrent Efficient Evaluation of Small-Change Parameters and Green's Functions for TCAD Device Noise and Variability Analysis. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 64 n. 3, pp. 1261-1267. - ISSN 0018-9383
Web of Science: 1 - Scopus: 0
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Articolo di rivista Donati Guerrieri, Simona; Bonani, Fabrizio; Bertazzi, Francesco; Ghione, Giovanni (2016)
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions - Part I: Large-Signal Sensitivity. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63 n. 3, pp. 1195-1201. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 5 - Scopus: 5
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Articolo di rivista Donati Guerrieri, Simona; Bonani, Fabrizio; Bertazzi, Francesco; Ghione, Giovanni (2016)
A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II - Small-Signal and Conversion Matrix Sensitivity. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63 n. 3, pp. 1202-1208. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 2 - Scopus: 4
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Articolo di rivista Valeria Teppati; Stefano Tirelli; Rickard Lovblom; Ralf Fluckiger; Maria Alexandrova; C.R. Bolognesi (2014)
Accuracy of Microwave Transistor fT and fMAX Extractions. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 61, pp. 984-990. - ISSN 0018-9383
Web of Science: 6 - Scopus: 8
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Curatela G. Ghione; K.J. Chen; T. Egawa; G. Meneghesso; T. Palacios; R. Quay (2013)
Guest Editorial - Special Issue on GaN Electronic Devices. [Curatela]
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Articolo di rivista Vittorio Camarchia;Jorge Jiulian Moreno Rubio;Marco Pirola;Roberto Quaglia;Paolo Colantonio;Franco Giannini;Rocco Giofre;Luca Piazzon;Thomas Emanuelsson;Tobias Wegeland (2013)
High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 60 n. 10, pp. 3592-3595. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 22 - Scopus: 20
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Articolo di rivista Bellotti E.; Bertazzi F.; Shishehchi S.; Matsubara M.; Goano M. (2013)
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 60 n. 10, pp. 3204-3215. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 12 - Scopus: 13
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Articolo di rivista Chiaria S.;Furno E.; Goano M.;Bellotti E. (2010)
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 57, pp. 60-70. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 26 - Scopus: 27
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Articolo di rivista El Baradai N.; Sanfilippo C.; Carta R.; Cappelluti F.; Bonani F. (2010)
An Improved Methodology for the CAD Optimization of Multiple Floating Field-Limiting Ring Terminations. In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 1 - Scopus: 7
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Articolo di rivista Traversa F.L.; Bertazzi F.; Bonani F.; Donati Guerrieri S.; Ghione G.; Pèrez S.; Mateos J.; Gonzàlez T. (2010)
A generalized drift-diffusion model for rectifying Schottky contact simulation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-57, pp. 1539-1547. - ISSN 0018-9383
Web of Science: 5 - Scopus: 5
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Articolo di rivista Furno M; Bonani F.; Ghione G (2008)
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 55, pp. 3347-3353. - ISSN 0018-9383
Web of Science: 3 - Scopus: 4
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Articolo di rivista Cappelluti F; Furno M; Angelini A; Bonani F; Pirola M; Ghione G. (2007)
On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 54, pp. 1744-1752. - ISSN 0018-9383
Web of Science: 13 - Scopus: 12
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Articolo di rivista P. Regoliosi; A. Reale; A. Di Carlo; P. Romanini; M. Peroni; C. Lanzieri; A. Angelini; M. Pirola; Ghione G. (2006)
Experimental Validation of GaN HEMTs Thermal Management by Using Photocurrent Measurements. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 53 n.2, pp. 182-188. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 25 - Scopus: 24
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Articolo di rivista Bonani F.; Donati Guerrieri S; Ghione G (2004)
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-51, pp. 467-476. - ISSN 0018-9383
Web of Science: 7 - Scopus: 8
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Articolo di rivista Bonani F.; Donati Guerrieri S; Ghione G (2004)
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part II: Discussion. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-51, pp. 477-485. - ISSN 0018-9383
Web of Science: 6 - Scopus: 7
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Articolo di rivista Bonani F; Donati Guerrieri S.; Ghione G (2003)
Author's reply to "Comments on "Noise source modeling for cyclostationary noise analysis in large-signal device operation"". In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-50, p. 2184. - ISSN 0018-9383
Web of Science: 0
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Articolo di rivista Bonani F; Donati Guerrieri S; Ghione G. (2003)
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 50 n.3, 633-644 . - ISSN 0018-9383
Web of Science: 27 - Scopus: 30
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Articolo di rivista Bonani F.; Donati Guerrieri S; Ghione G (2002)
Noise source modeling for cyclostationary noise analysis in large-signal device operation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-49, pp. 1640-1647. - ISSN 0018-9383
Web of Science: 31 - Scopus: 32
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Articolo di rivista M. Farahmand; C. Garetto; E. Bellotti; K.F. Brennan; Goano M.; E. Ghillino; Ghione G.; J.D. Albrecht; P.P. Ruden (2001)
Monte Carlo Simulation of Electron Transport in theIII-Nitride Wurtzite Phase Materials System: Binaries andTernaries. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 48, pp. 535-542. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 169 - Scopus: 204
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Articolo di rivista Bonani F.; Donati Guerrieri S; Ghione G; Pirola M (2001)
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-48, pp. 966-977. - ISSN 0018-9383
Web of Science: 43 - Scopus: 45
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Articolo di rivista M.J. Abou-Khalil; A. Rahal; Goano M.; R. Maciejko; K. Wu; R.G. Bosisio (1998)
Predicting nonlinear electrical performance in single and multiple quantum-barrier varactors (QBV's) by the Monte Carlo technique. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 45, pp. 1399-1406. - ISSN 0018-9383 [Disponibilità ristretta]
Web of Science: 0 - Scopus: 0
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Articolo di rivista Bonani F.; Ghione G; Pinto M.R; Smith R.K (1998)
An efficient approach to noise analysis through multidimensional physics-based models. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-45, pp. 261-269. - ISSN 0018-9383
Web of Science: 88 - Scopus: 84
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Articolo di rivista G. Ghione,B. Wang,M. Curow (1993)
Comments on numerical large-signal simulation of the diffusion noise in GaAs Gunn devices" [with reply]. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 40, pp. 1902-1903. - ISSN 0018-9383
Web of Science: 0 - Scopus: 0

Articolo di rivista M. Mazza; Civera P.; L. Thvenaz And A.M. Ionescu
NOVEL SOI SCHOTTKY ELECTRO-OPTICAL MODULATOR WITH INCREASED BANDWIDTH AND REDUCED THERMAL EFFECTS. In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383 (In stampa)

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