A gauge-invariant formulation of high-field transport in semiconductors is proposed. We revisit the conventional description of carrier–phonon scattering within the Fermi golden rule scheme by means of a gauge-invariant generalization of the scattering rates. With a density-matrix approach, we show that the so-called intracollisional field effect, as usually accounted for, has always been overestimated due to the neglect of the time variation of the basis states, which in turn leads to a ill-defined Markov limit in the carrier–phonon interaction process. This is confirmed by a fully three-dimensional simulation of charge transport in state-of-the-art semiconductor superlattices.

Intracollisional field effect: a gauge-invariant formulation in semiconductors / Ciancio, Emanuele; Iotti, Rita Claudia; Rossi, Fausto. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 19:4(2004), pp. S212-S214. [10.1088/0268-1242/19/4/072]

Intracollisional field effect: a gauge-invariant formulation in semiconductors

CIANCIO, Emanuele;IOTTI, Rita Claudia;ROSSI, FAUSTO
2004

Abstract

A gauge-invariant formulation of high-field transport in semiconductors is proposed. We revisit the conventional description of carrier–phonon scattering within the Fermi golden rule scheme by means of a gauge-invariant generalization of the scattering rates. With a density-matrix approach, we show that the so-called intracollisional field effect, as usually accounted for, has always been overestimated due to the neglect of the time variation of the basis states, which in turn leads to a ill-defined Markov limit in the carrier–phonon interaction process. This is confirmed by a fully three-dimensional simulation of charge transport in state-of-the-art semiconductor superlattices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1579311
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